Resistive switching mechanism in ZNxCd1-xS nonvolatile memory devices

Zheng Wang, Peter B. Griffin, Jim McVittie, Simon Wong, Paul C. McIntyre, Yoshio Nishi

    Research output: Contribution to journalArticle

    72 Citations (Scopus)

    Abstract

    Nonvolatile information storage devices based on an abrupt resistance switch when an electric bias is applied are very attractive for future memory applications. Recently, such a resistance switch was described in ferroelectric ZnxCd1-xS but the mechanism of switching remains controversial. Here, we present results that elucidate the mechanism, showing that a metal needs to be easily oxidized and is capable of diffusing into the ZnCdS film as a cation impurity forming a filamentary metallic conduction path.

    Original languageEnglish (US)
    Pages (from-to)14-16
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume28
    Issue number1
    DOIs
    StatePublished - Jan 1 2007

    Fingerprint

    Data storage equipment
    Switches
    Ferroelectric materials
    Cations
    Positive ions
    Metals
    Impurities

    Keywords

    • Chalcogenide
    • Nonvolatile memory
    • Resistive switching
    • ZnCdS

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Wang, Z., Griffin, P. B., McVittie, J., Wong, S., McIntyre, P. C., & Nishi, Y. (2007). Resistive switching mechanism in ZNxCd1-xS nonvolatile memory devices. IEEE Electron Device Letters, 28(1), 14-16. https://doi.org/10.1109/LED.2006.887640

    Resistive switching mechanism in ZNxCd1-xS nonvolatile memory devices. / Wang, Zheng; Griffin, Peter B.; McVittie, Jim; Wong, Simon; McIntyre, Paul C.; Nishi, Yoshio.

    In: IEEE Electron Device Letters, Vol. 28, No. 1, 01.01.2007, p. 14-16.

    Research output: Contribution to journalArticle

    Wang, Z, Griffin, PB, McVittie, J, Wong, S, McIntyre, PC & Nishi, Y 2007, 'Resistive switching mechanism in ZNxCd1-xS nonvolatile memory devices' IEEE Electron Device Letters, vol. 28, no. 1, pp. 14-16. https://doi.org/10.1109/LED.2006.887640
    Wang, Zheng ; Griffin, Peter B. ; McVittie, Jim ; Wong, Simon ; McIntyre, Paul C. ; Nishi, Yoshio. / Resistive switching mechanism in ZNxCd1-xS nonvolatile memory devices. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 1. pp. 14-16.
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